润新微电子(大连)有限公司从事第三代半导体硅基氮化镓外延材料及功率器件的研发、设计、生产和销售,已实现6英寸650伏硅基氮化镓外延片和各种规格功率器件的量产,功率器件电源功率的应用范围范围低至30W,高至6KW。
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Cascode 型GaN 功率器件的开关过程及损耗分析 点击下载
Improving Performances of Enhancement-Mode AlGaN/GaN MIS-HEMTs on 6-inch Si Substrate Utilizing SiON/Al2O3 Stack Dielectrics 点击下载
Gate-first AlGaN/GaN HEMT technology for enhanced threshold voltage stability based on MOCVD-grown in situ SiNx 点击下载
Temperature-Dependent Hot Electron Effects and Degradation Mechanisms in 650-V GaN-Based MIS-HEMT Power Devices Under Hard Switching Operations 点击下载
Effects of SiON/III-nitride interface properties on device performances of GaN-based power field-effect transistors 点击下载
Effects of substrate termination on Ron increase under stress in 650 V GaN power devices 点击下载
Improving Gate Reliability of 6-In E-Mode GaN-Based MIS-HEMTs by Employing Mixed Oxygen and Fluorine Plasma Treatment 点击下载
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